At the heart of an InGaN LED are InGaN quantum wells, buried within a GaN p-n junction. These devices often feature an AlGaN barrier, used to prevent the overflow of electrons from the quantum well.

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The automotive semiconductor market is expecting a CAGR of 11 percent between 2023 and 2029 to almost $100 billion at the end ...

Cambridge GaN Devices and Qorvo have partnered to bring together motor control and power efficiency technologies in the PAC5556A + ICeGaN evaluation kit (EVK). This collaboration combines Qorvo's high ...

Looking further ahead, Martinovic expects microLEDs, including those he is helping to pioneer, to penetrate the automotive industry, due to their high level of robustness. MicroLEDs may also take ...

Sivers Semiconductors, the Swedish specialist in photonics and wireless technologies, has announced its Q3 2024 results, ...